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(PDF) GT80J101 Datasheet download


Manufacture Part Number Description PDF
Toshiba Semiconductor
Toshiba Semiconductor
GT80J101 N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)

GT80J101 pdf
Toshiba Semiconductor
Toshiba Semiconductor
GT80J101A Insulated Gate Bipolar Transistor
GT80J101A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT80J101A
High Power Switching Applications
Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Satura
GT80J101A pdf
Toshiba Semiconductor
Toshiba Semiconductor
GT80J101B Insulated Gate Bipolar Transistor
GT80J101B
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT80J101B
High Power Switching Applications
• • • Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) L
GT80J101B pdf





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