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Toshiba Semiconductor
GT80J101 N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
GT80J101

Toshiba Semiconductor
GT80J101A Insulated Gate Bipolar Transistor
GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A) · · · Maximum Ratings (Ta
GT80J101

Toshiba Semiconductor
GT80J101B Insulated Gate Bipolar Transistor
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications • • • Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm Maximum R
GT80J101




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