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GW45HF60WD

ST Microelectronics

STGW45HF60WD

STGW45HF60WD 45 A, 600 V ultra fast IGBT Preliminary data Features ■ ■ ■ Improved Eoff at elevated temperature Low CRE...



GW45HF60WD

ST Microelectronics


Octopart Stock #: O-823984

Findchips Stock #: 823984-F

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Description
STGW45HF60WD 45 A, 600 V ultra fast IGBT Preliminary data Features ■ ■ ■ Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Ultra fast soft recovery antiparallel diode 3 Applications 2 ■ ■ ■ Welding High frequency converters Power factor correction TO-247 1 Description The "HF" series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature. Suffix "W" denotes a subset of products tailored to high switching frequency operation over 100 kHz. Figure 1. Internal schematic diagram Table 1. Device summary Marking GW45HF60WD Package TO-247 Packaging Tube Order code STGW45HF60WD August 2009 Doc ID 15593 Rev 2 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STGW45HF60WD 1 Electrical ratings Table 2. Symbol VCES IC IC (1) (1) Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Continuous collector current at TC = 100 °C Collector current (pulsed) Turn-off latching current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge not repetitive forward current tp= 10 ms sinusoidal Total dissipation at TC = 25 °C Storage temperature – 55 to 150 Operating junction temperature °C Value 600 70 45 TBD TBD ± 20 30 120 250 Unit V A A A A V A A W ICP(2) ICL (3) ...




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