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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : ...
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5
H03N60 Series
N-Channel Power Field Effect Transistor
H03N60 Series Pin Assignment
Tab
Description
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage-blocking capability without degratding performance over time. In addition, this advanced
MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected
voltage transients.
1 2 3
3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source
1 2 3
D G S
Features
H03N60 Series Symbol:
Robust High
Voltage Termination Avalanc he Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (P...