Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I LI C O N T R AN S I S T O
H1008
█
█ ABSOLUTE MAXIMUM RATINGS（Ta=2...
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I LI C O N T R AN S I S T O
H1008
█
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………800mW VCBO——Collector-Base
Voltage………………………………80V VCEO——Collector-Emitter
Voltage……………………………60V VEBO——Emitter-Base
Voltage………………………………8V IC——Collector Current……………………………………700mA
TO-92
1―Emitter，E 2―Base，B 3―Collector，C
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
ICBO IEBO HFE(1) VCE(sat) VBE(sat) BVCBO BVCEO BVEBO
fT Cob
Characteristics
Collector Cut-off Current
Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation
Voltage Base-Emitter Saturation
Voltage
Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Current Gain-Bandwidth Product
Output Capacitance
█ hFE Classification
Min Typ Max Unit
Test Conditions
100 nA VCB=60V, IE=0
100 nA VEB=5V, IC=0
40 400 VCE=2V, IC=50mA
0.2 0.4 V IC=500mA, IB=50mA
0.86 1.1 V IC=500mA, IB=50mA
80 V IC=100μA, IE=0
60 V IC=10mA, IB=0
8 V IE=10μA，IC=0
30 50
MHz VCE=10V, IC=50mA
8 pF VCB=10V, IE=0，f=1MHz
R 40—80
O 70—140
Y 120—240
GR 240—400
Shantou Huashan Electronic Devices Co.,Ltd.
H1008
...
