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H10NC60FI Datasheet

Part Number H10NC60FI
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description STH10NC60FI
Datasheet H10NC60FI DatasheetH10NC60FI Datasheet (PDF)

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI www.DataSheet4U.com s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-247 3 3 2 1 2 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve t.

  H10NC60FI   H10NC60FI






STH10NC60FI

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI www.DataSheet4U.com s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-247 3 3 2 1 2 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt VISO Tstg Tj . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 10 6.3 40 160 1.28 Value STW10NC60 600 600 ±30 10 (*) 6.3 (*) 40 (*) 60 0.48 3.5 2500 – 55 to 150 (1)ISD ≤ 10A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (*) Limited only by Maximum Tempe.


2006-10-10 : HPL1005    HY5DU561622AT    HY5DU56422AT    HY5DU56822AT    HY5DU561622LT    IXGM20N60    IXGH20N60A    IXGM20N60A    HY5DU56422LT    HY5DU56822LT   


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