N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET
TYPE STW10NC60 STH10NC60FI www.DataSheet4U.com
s s s s s
STW10NC60 STH10NC60FI
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 10 A 10 A (*)
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-247
3
3 2 1
2 1
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve t.
STH10NC60FI
N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET
TYPE STW10NC60 STH10NC60FI www.DataSheet4U.com
s s s s s
STW10NC60 STH10NC60FI
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 10 A 10 A (*)
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-247
3
3 2 1
2 1
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
s
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt VISO Tstg Tj
.
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 10 6.3 40 160 1.28
Value STW10NC60 600 600 ±30 10 (*) 6.3 (*) 40 (*) 60 0.48 3.5 2500 – 55 to 150
(1)ISD ≤ 10A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (*) Limited only by Maximum Tempe.