H11F3

PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 6 OUTPUT TERM. 6 1 6 CATHODE 2 5 1 3 4 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. FEATURES As a remote variable resistor ≤ 100Ω to ≥ 300 MΩ ≥ 99.9% linearity ≤ 15 pF shunt capacitance ≥ 100 GΩ I/O isolation resistance As an analog switch Extremely low offset voltage 60 Vpk-pk signal capability No charge injection or latch-up ton, toff ≤ 15 µS UL recognized (File #E90700) VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300) APPLICATIONS As a variable resistor – Isolated variable attenuator Automatic gain control Active filter fine tuning/band switching As an analog switch – Isolated sample and hold circuit Multiplexed, optically isolated A/D conversion © 2002 Fairchild Semiconductor Corporation Page 1 of 9 6/24/02 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (10 µs pulse, 1% duty cycle) L...