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H128M

Huashan

NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H128M APPLICATIONS Suitable For Low Voltage Large ...


Huashan

H128M

File Download Download H128M Datasheet


Description
Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H128M APPLICATIONS Suitable For Low Voltage Large Current Drivers ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55~150 Tj Junction Temperature 150 PC Collector Dissipation 40 0mW VCBO Collector-Base Voltage 20V VCEO Collector-Emitter Voltage 15V VEBO Emitter- Base Voltage 6. 5 V IC Collector Current 1. 5A TO-92 1 Emitter E 2 Collector C 3 Base B ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO HFE VCE(sat) ICBO IEBO fT Cob Ron Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector- Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current Current Gain-Bandwidth Product Output Capacitance On Resistance IC=50 A, IE=0 IC=1mA, IB=0 IE=50 A IC=0 VCE=1V, IC=100mA IC=500mA, IB=50mA A VCB=20V, IE=0 A VEB=6V, IC=0 VCE=5V, IC=50mA VCB=10V, IE=0 f=1 IB=1mA ...




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