H13003D

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. H13003D Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2．FEATURES High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE* VCE * sat VBE * sat tr tf ts fT VCBO VCEO VEBO IC Ptot Tj Tstg 650 400 9 2.0 1.25 26 150 -55～150 V V V A W ℃ ℃ TEST CONDITION IC=1mA，IE=0 IC=1mA，IB=0 IE=1mA，IC=0 VCB=650V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=200mA IC=1A, IB=0.5A IC=1A, IB=0.5A IC=250mA (UI9600) VCE=20V,IC=20mA, f=1MHz VALUE MIN TYP MAX 650 400 9 10 20 10 8 15 30 0.6 1.2 0.5 0.5 2.1 3.3 U...