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H13003DL
Bipolar Junction Transistor
Description
R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. H13003DL ◆ NPN ◆ RoHS 1． 110V 、 2． 3． TO-126D 4． 4.1 ，Tamb= 25℃ - - - Ta=25℃ Tc=25℃ 4.2 ，Tamb= 25℃ - - - - - - - - ＊: tp≤300μs,δ≤2% 1 VD 1 (B) 2 (C) 3 (E) VCBO VCEO VEBO IC Ptot Tj Tstg 400 200 9 4.0 1.25 27 150 -55～150 V V V A W ℃ ℃ BVCBO BVCEO ...
Jingdao
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