R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
H13005D
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1....
R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
H13005D
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1.APPLICATION
Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies
2.FEATURES
High
voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed
3.PACKAGE
1 VD
SOT-82
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base
Voltage
Collector-Emittor
Voltage
Emittor- Base
Voltage
Collector Current
Power Dissipation
Ta=25℃ Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
Collector-Base
Voltage Collector-Emittor
Voltage Emittor-Base
Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation
Voltage Base-Emittor Saturation
Voltage Rising Time Falling Time Storage Time
Typical Frequency
BVCBO BVCEO BVEBO
ICBO ICEO IEBO
hFE*
VCE
* sat
VBE
* sat
tr
tf
ts
fT
VCBO VCEO VEBO
IC
Ptot
Tj Tstg
700 400 9 4 1.25 45 150 -55~150
V V V A
W
℃ ℃
TEST CONDITION
IC=1mA,IE=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=0.5A IC=2A, IB=1A IC=2A, IB=1A
IC=500mA (UI9600)
VCE=10V,IC=0.5A, f=1MHz
VALUE MIN TYP MAX 700 400
9 10 20 10
8 15 30
0.8 1.4 1 0.8 2.5 4.0
UNIT
V V V ...