H1423

Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR H1423 █ GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage………………………………-40V VCEO——Collector-Emitter Voltage……………………………-40V VEBO——Emitter-Base Voltage………………………………-7V IC—IC——C—olCleocltloercCtourrreCnut…rre…nt………………………………………………………………3…00…mA-200mA IB——Base Current……………………………………………-200mA TO-92 1―Emitter，E 2―Base，B 3―Collector，C █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO ICBO IEBO HFE VCE(sat) VBE fT Cob Characteristics Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Voltage Current Gain-Bandwidth Product Output Capacitance Min Typ Max Unit Test Conditions -40 V IC=-1mA, IB=0 -50 nA VCB=-30V, IE=0 -100 nA VEB=-6V, IC=0 70 400 VCE=-5V, IC=-2mA -0.22 V IC=-50mA, IB=-10mA -0.65 V VCE=-5V, IC=-2mA 150 300 MHz VCE=-5V, IC=-10mA 4.5 pF VCB=-10V, IE=0，f=1MHz ...