H1N60D

1.3A, 600V, N H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI U: TO-251 D: TO-252 1N60 Series N-Channel MOSFET 80/ 2.5K/ 4Kpcs/ 5Kpcs/ 24Kpcs 25Kpcs 　■APPLICATION 　　ELECTRONIC BALLAST 　　ELECTRONIC TRANSFORMER 　　SWITCH MODE POWER SUPPLY ID=1.3A VDS=600V RDS(on)=13Ω 　■FEATURES 　　LOW ON-RESISTANCE 　　FAST SWITCHING 　　HIGH INPUT RESISTANCE 　　RoHS COMPLIANT 　　Package: TO-251 and TO-252（IPAK & DPAK） 　■ 　　、、、RoHS 　■ 　　、LCD、LED、、UPS 　　、、、、 　　、、 　　、 　■ 　　TO-251（IPAK）、TO-252（DPAK） 1N60 Series Pin Assignment 3-Lead Plastic TO-251 Package Code: U Pin 1: Gate Pin 2: Drain Pin 3: Source 3-Lead Plastic TO-252 Package Code: D Pin 1: Gate Pin 2: Drain Pin 3: Source 2D Series Symbol: 1 G 3S ■ 　Absolute Maximum Ratings（TC=25℃） PARAMETER -　Drain-source Voltage -　gate-source Voltage 　Continuous Drain Current８ TC=25℃ TC=100℃ 　Drain Current －Pulsed 　① 　Power Dissipation (TL=25°C) 　Junction Temperature 　Storage Temperature 　Single Pulse Avalanche Energy　② 　 * 　 (*Drain current limited by maximum junction temperature) SYMBOL VDS VGS ID IDM PD Tj TSTG EAS VALUE 600 ±30 1.0 * 0.6 * 4.0 * 28 150 -55~+150 14 UNIT V A W ℃ mJ http://www.szhhe.com HAOHAI ELECTRONICS CO., LTD. 1　6 [email protected] 1N60C-UD-E2C 1.3A, 600V, N ■ 　Electronic Characteristics（TC=25℃） PARAMETER SYMBOL - Drain-source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj Gate Threshold Voltage VGS(TH) - Drain-source Leakage Current IDSS Fo...