MOSFET. H1N60U Datasheet

H1N60U Datasheet PDF


Part

H1N60U

Description

N-Channel MOSFET

Manufacture

HAOHAI

Page 6 Pages
Datasheet
Download H1N60U Datasheet


H1N60U Datasheet
1.3A, 600V, N沟道 场效应晶体管 产品参数规格书
工业型号
公司型号 通俗命名
H
FQU1N60C
FQD1N60C
H1N60U
H1N60D
1N60
HAOHAI
封装标识
U: TO-251
D: TO-252
1N60 Series
N-Channel MOSFET
包装方式
每管数量
每盒数量
条管装
载带卷盘
80/
2.5K/
4Kpcs/
5Kpcs/
每箱数量
24Kpcs
25Kpcs
 ■APPLICATION
  ELECTRONIC BALLAST
  ELECTRONIC TRANSFORMER
  SWITCH MODE POWER SUPPLY
ID=1.3A
VDS=600V
RDS(on)=13
 ■FEATURES
  LOW ON-RESISTANCE
  FAST SWITCHING
  HIGH INPUT RESISTANCE
  RoHS COMPLIANT
  Package: TO-251 and TO-252IPAK & DPAK
 ■特点
  导通电阻低、开关速度快、输入阻抗高、符合RoHS规范
 ■应用范围
  开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源
  各种充电器、电子整流器、电子变压器、逆变器、控制器
  转换器、风扇控制板、
  以及电源适配器、汽车稳压器等线性放大和功率开关电路
 ■封装形式
  TO-251IPAK)、TO-252DPAK
1N60 Series Pin Assignment
3-Lead Plastic TO-251
Package Code: U
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic TO-252
Package Code: D
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol: 1 G
3S
最大额定 Absolute Maximum RatingsTC=25℃)
参数
PARAMETER
-源电压 Drain-source Voltage
-源电压 gate-source Voltage
漏极电流 Continuous Drain Current
TC=25
TC=100
最大脉冲电流 Drain Current Pulsed  ①
耗散功率 Power Dissipation (TL=25°C)
最高结温 Junction Temperature
存储温度 Storage Temperature
单脉冲雪崩能量 Single Pulse Avalanche Energy ②
  * 漏极电流由最高结温限制  (*Drain current limited by maximum junction temperature)
符号
SYMBOL
VDS
VGS
ID
IDM
PD
Tj
TSTG
EAS
额定值
VALUE
600
±30
1.0 *
0.6 *
4.0 *
28
150
-55~+150
14
单位
UNIT
V
A
W
mJ
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
1页 共6
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
1N60C-UD-E2C

H1N60U Datasheet
1.3A, 600V, N沟道 场效应晶体管 产品参数规格书
电特性 Electronic CharacteristicsTC=25℃)
参数
PARAMETER
符号
SYMBOL
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
击穿电压温度系数
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTj
栅极开启电压
Gate Threshold Voltage
VGS(TH)
-源漏电流
Drain-source Leakage Current
IDSS
跨导
Forward Transconductance
gFS
测试条件
TEST CONDITION
VGS=0V, ID=250μA
ID=250uA
Referenced to 25
VGS=VDS, ID=250μA
VDS=600V
VGS=0V, Tj=25
VDS=480V
VGS=0V, Tj=125
VDS=40V, ID=0.5A ③
1N60 Series
N-Channel MOSFET
最小值 典型值 最大值
MIN TYP MAX
单位
UNIT
600 V
0.6 V/
2.0 4.0 V
25
μA
250
0.5 S
订货方式 ORDERING INFORMATION
包装形式
PACKING
TO-251 普通袋装 NORMAL PACKING
TO-251 条管装 TUBE PACKING
TO-252 条管装 TUBE PACKING
TO-252 载带卷盘装 TAPE & REEL PACKING
订货编码 ORDERING CODE
普通塑封料
Nomal Package Material
无卤塑封料
Halogen Free
H1N60U
H1N60U-PbF
H1N60U-TU
H1N60U-TU-PbF
H1N60D-TU
H1N60D-TU-PbF
H1N60D-TR
H1N60D-TR-PbF
包装规格 Packaging Specifications
TO-251  条管装,每管80只,每盒4000只,每箱24000(80Pcs/Tube, 4Kpcs/BOX, 24Kpcs/Carton)
TO-252
 条管装,每管80只,每盒4000只,每箱24000(80Pcs/Tube, 4Kpcs/BOX, 24Kpcs/Carton)
 每卷盘2500只,每盒5000只,每箱25000(2.5Kpcs/Reel, 5Kpcs/BOX, 25Kpcs/Carton)
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
2页 共6
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
1N60C-UD-E2C


Features Datasheet pdf 1.3A, 600V, N H FQU1N60C FQD1N6 0C H1N60U H1N60D 1N60 HAOHAI U: TO -251 D: TO-252 1N60 Series N-Channel M OSFET 80/ 2.5K/ 4Kpcs/ 5Kpcs / 24Kpcs 25Kpcs  ■APPLICATION  ELECTRONIC BALLAST   ELECTRONIC TRANSFORMER   SWITCH MODE POWER SU PPLY ID=1.3A VDS=600V RDS(on)=13Ω ■FEATURES   LOW ON-RESISTANCE  FAST SWITCHING   HIGH INPUT RE SISTANCE   RoHS COMPLIANT   Pac kage: TO-251 and TO-252(IPAK & DPAK  ■   、、、RoHS  ■  、LCD、LED、、UPS   、、 、、   、、   、  ■  TO-251(IPAK)、TO-252(DPAK 1N60 Series Pin Assignment 3-Lead Pl astic TO-251 Package Code: U Pin 1: Gat e Pin 2: Drain Pin 3: Source 3-Lead Pl astic TO-252 Package Code: D Pin 1: Gat e Pin 2: Drain Pin 3: Source 2D Series Symbol: 1 G 3S ■  Absolute Maxim um Ratings(TC=25℃) PARAMETER - Drain-source Voltage - gate-source Voltage  Continuous Drain Current8 TC=25℃ TC=100℃  Drain Current -Pulsed  ①  Power Dissipation (TL=25°C)  Junction Temperature  Storage Temperature  Single Pulse Avalanche Energy ②   *   (*D.
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