H20T120 Datasheet


Part Number

H20T120

Description

IHW20T120

Manufacture

Infineon

Total Page 14 Pages
PDF Download
Download H20T120 Datasheet


Features Datasheet pdf www.DataSheet4U.com IHW20T120 Soft Swit ching Series Low Loss DuoPack : IGBT i n Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • Short circuit wit hstand time – 10µs Designed for : - Soft Switching Applications - Induction Heating Trench and Fieldstop technolog y for 1200 V applications offers : - ve ry tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability d ue to positive temperature coefficient in VCE(sat) Very soft, fast recovery an ti-parallel EmCon™ HE diode Low EMI A pplication specific optimisation of inv erse diode VCE 1200V IC 20A VCE(sat),Tj =25°C 1.7V Tj,max 150°C C G E • • • Type IHW20T120 Marking H20T1 20 Package TO-247AC Ordering Code Q67 040-S4652 Maximum Ratings Parameter Co llector-emitter voltage DC collector cu rrent TC = 25°C TC = 100°C Pulsed col lector current, tp limited by Tjmax Tur n off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC.
Keywords H20T120, datasheet, pdf, Infineon, , IHW20T120, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

H20T120 Datasheet
www.DataSheet4U.com
Soft Switching Series
IHW20T120
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Very soft, fast recovery anti-parallel EmConHE diode
Low EMI
Application specific optimisation of inverse diode
C
G
E
Type
IHW20T120
VCE
1200V
IC
20A
VCE(sat),Tj=25°C
1.7V
Tj,max
150°C
Marking
H20T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-247AC Q67040-S4652
Value
1200
40
20
60
60
Unit
V
A
23
13
36
50
130
120
±20
10
178
-40...+150
-55...+150
260
A
V
µs
W
°C
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2
Apr-04




@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)