1 H27U518S2C Series 512 Mbit (64 M x 8 bit) NAND Flash
512 Mb NAND Flash H27U518S2C
This document is a general product...
1 H27U518S2C Series 512 Mbit (64 M x 8 bit) NAND Flash
512 Mb NAND Flash H27U518S2C
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Dec. 2008 1
1PrePreliminaryeee H27U518S2C Series 512 Mbit (64 M x 8 bit) NAND Flash
Document Title
512 Mbit (64 M × 8 bit ) NAND Flash Memory
Revision History
Revision No. 0.0 0.1 1.0 Initial Draft Correct Partnumber Preliminary removed History Draft Date Jul. 29. 2008 Nov. 25. 2008 Dec. 10. 2008 Remark Preliminary Preliminary
Rev 1.0 / Dec. 2008
2
1PrePreliminaryeee H27U518S2C Series 512 Mbit (64 M x 8 bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code - 2nd cycle : Device Code
NAND INTERFACE
- x8 bus width - Address/ Data Multiplexing - Pinout compatiblity for all densities
CHIP ENABLE DON’T CARE
- Simple interface with microcontroller
SUPPLY
VOLTAGE
- 3.3 V device : Vcc = 2.7 V ~ 3.6 V
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions.
MEMORY CELL ARRAY
- (512 + 16) bytes x 32 pages x 4096 blocks
DATA RETENTION
- 100,000 Program/Erase cycles (with 1bit/528byte ECC) - 10 years Data Retention
PAGE SIZE
- (512 + 16 spare) Bytes
PACKAGE
- H27U518S2CTR-Bx : 48-Pin TSOP1 (12 × 20 × 1.2 mm) - H27U518S2CTR-Bx (Lead & Halogen Free)
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