HI-SINCERITY
MICROELECTRONICS CORP.
H2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6240 Issued Date : 1992.11.25...
HI-SINCERITY
MICROELECTRONICS CORP.
H2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/5
Description
The H2N3906 is designed for general purpose switching and amplifier applications.
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 625 mW
Maximum
Voltages and Currents (TA=25°C) VCBO Collector to Base
Voltage .....................................................................................................................