H2N4401

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6215 Issued Date : 1992.09.22 Revised Date : 2002.02.22 Page No. : 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features Complementary to H2N4403 High Power Dissipation: 625 mW at 25°C High DC Current Gain: 100-300 at 150mA High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)................................................................................................................ 625 mW Maximum Voltages and ...