H2N5087

HI-SINCERITY MICROELECTRONICS CORP. H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6210 Issued Date : 1998.02.01 Revised Date : 2005.01.20 Page No. : 1/5 Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .......................................................................