HI-SINCERITY
MICROELECTRONICS CORP.
H2N5088
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6227 Issued Date : 1993.04.12...
HI-SINCERITY
MICROELECTRONICS CORP.
H2N5088
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6227 Issued Date : 1993.04.12 Revised Date : 2005.01.20 Page No. : 1/4
Description
This device was designed for low noise, high gain , general purpose amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 350 mW
Maximum
Voltages and Currents (TA=25°C) VCBO Collector to Base
Voltage ....................................................................