HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/...
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5
H2N5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5551 is designed for amplifier transistor.
Features
Complements to PNP Type H2N5401 High Collector-Emitter Breakdown
Voltage (VCEO>160V (@IC=1mA))
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
Maximum
Voltages and Currents (TA=25°C) VCBO Collector to Base
Voltage ......................................................................................................................... 180 V VCEO Collector to Emitter
Voltage ...................................................................................................................... 160 V VEBO Emitter to Base
Voltage ................................................................................................................................ 6 V IC Collector Current .............................................................................