H2N6426

HI-SINCERITY MICROELECTRONICS CORP. H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6232 Issued Date : 1998.01.09 Revised Date : 2005.01.20 Page No. : 1/4 Description Darlington Transistor Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW Maximum Voltages and Currents (TA=25°C) BVCEO Collector to Emitter Voltage...................................................................................................................... 40 V BVCBO Collector to Base Voltage................