HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/...
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4
H2N6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6520 is designed for general purpose applications requiring high breakdown
voltages.
Features
High Collector-Emitter Breakdown
Voltage Low Collector-Emitter Saturation
Voltage The H2N6520 is complementary to H2N6517
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
Maximum
Voltages and Currents...