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H5N3003P Datasheet

Part Number H5N3003P
Manufacturers Renesas Technology
Logo Renesas Technology
Description N-Channel MOSFET
Datasheet H5N3003P DatasheetH5N3003P Datasheet (PDF)

www.DataSheet4U.com H5N3003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003 Features • Low on-resistance • Low leakage current • High Speed Switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Aug.01.2003, page 1 of 9 www.DataSheet4U.com H5N3003P Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode .

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N-Channel MOSFET

www.DataSheet4U.com H5N3003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003 Features • Low on-resistance • Low leakage current • High Speed Switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Aug.01.2003, page 1 of 9 www.DataSheet4U.com H5N3003P Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch Note2 Note1 Ratings 300 ±30 40 160 40 160 30 150 0.833 150 –55 to +150 Unit V V A A A A A W °C /W °C °C θch-c Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.2.00, Aug.01.2003, page 2 of 9 www.DataSheet4U.com H5N3003P Electrical Characteristics (Ta = 25°C) Item Symbol Min 300 — — 3.0 20 — — — — — — — — — — — — — — Typ — — — — 35 0.058 5150 560 90 60 185 220 150 130 25 60 1.0 280 2.5 Max — 1 ±0.1 4.0 — Unit V µA µA V S Test Conditions ID = 10mA, VGS = 0 VDS = 300V, VGS = 0 VGS = ±30V, VDS = 0 VDS = 10V, ID = 1mA ID = 20A, VDS = 10VNote4 ID = 20A, VGS= 10VNote4 VDS = 25V VGS = 0 f = 1MHz ID= 20A RL = 7.5Ω VGS = 10V Rg=10 Ω VDD = 240V VGS = 10V ID = 40A IF = 40A, VGS = 0 IF = 40A, VGS = 0 diF/dt=100A/µ.


2007-12-28 : P6NK60    STA405A    12C5410    APL1117    APL1117R    APL1117D    LW1045    H5N3003P    H5N3004P    H5N3007CF   


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