www.DataSheet4U.com
H5N3003P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003
Features
• Low on-resistance • Low leakage current • High Speed Switching
Outline
TO-3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
Rev.2.00, Aug.01.2003, page 1 of 9
www.DataSheet4U.com
H5N3003P
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode .
N-Channel MOSFET
www.DataSheet4U.com
H5N3003P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003
Features
• Low on-resistance • Low leakage current • High Speed Switching
Outline
TO-3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
Rev.2.00, Aug.01.2003, page 1 of 9
www.DataSheet4U.com
H5N3003P
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch
Note2 Note1
Ratings 300 ±30 40 160 40 160 30 150 0.833 150 –55 to +150
Unit V V A A A A A W °C /W °C °C
θch-c Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C
Rev.2.00, Aug.01.2003, page 2 of 9
www.DataSheet4U.com
H5N3003P
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min 300 — — 3.0 20 — — — — — — — — — — — — — — Typ — — — — 35 0.058 5150 560 90 60 185 220 150 130 25 60 1.0 280 2.5 Max — 1 ±0.1 4.0 — Unit V µA µA V S Test Conditions ID = 10mA, VGS = 0 VDS = 300V, VGS = 0 VGS = ±30V, VDS = 0 VDS = 10V, ID = 1mA ID = 20A, VDS = 10VNote4 ID = 20A, VGS= 10VNote4 VDS = 25V VGS = 0 f = 1MHz ID= 20A RL = 7.5Ω VGS = 10V Rg=10 Ω VDD = 240V VGS = 10V ID = 40A IF = 40A, VGS = 0 IF = 40A, VGS = 0 diF/dt=100A/µ.