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H5N3007CF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0473-0100 Rev.1.00 Nov.11.2004...
www.DataSheet4U.com
H5N3007CF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0473-0100 Rev.1.00 Nov.11.2004
Features
Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode
Outline
TO-220CFM
D
G
1. Gate 2. Drain 3. Source
1 S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) IDR Note 1 IDR(pulse) Note 3 IAP Pch Note 2 θch-c Tch Tstg
Note 1
Ratings 300 ±30 15 60 15 60 15 35 3.57 150 –55 to +150
Unit V V A A A A A W °C/W °C °C
Rev.1.00, Nov.11.2004, page 1 of 3
www.DataSheet4U.com H5N3007CF
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown
voltage Gate to source leak current Zero gate
voltage drain current Gate to source cutoff
voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body–drain diode forward
voltage Body–drain diode reverse recovery time Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V...