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H5TQ4G43MFR-xxC

Hynix Semiconductor

4Gb DDR3 SDRAM

4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G43MFR-xxC H5TQ4G83MFR-xxC H5TQ4G63MFR-xxC ...


Hynix Semiconductor

H5TQ4G43MFR-xxC

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Description
4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G43MFR-xxC H5TQ4G83MFR-xxC H5TQ4G63MFR-xxC * SK hyix Semiconductor reserves the right to change products or specifications without Rev. 1.0 / Nov. 2012 1 Free Datasheet http://www.datasheet4u.com/ Revision History Revision No. 0.1 0.2 0.3 0.4 0.5 1.0 History Initial Release Ballout typo correction Package Dimension correction Added IDD Specification Added IDD Specification(x16) Latest JEDEC Spec Updated Draft Date Apr. 2011 May. 2011 Jun. 2011 Aug. 2011 Nov. 2011 Nov. 2012 Remark Rev. 1.0 / Nov. 2012 2 Free Datasheet http://www.datasheet4u.com/ Description The H5TQ4G43MFR-xxC, H5TQC4G83MFR-xxC and H5TQ4G63MFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth. Device Features and Ordering Information FEATURES VDD=VDDQ=1.5V + - 0.075V Fully differential clock inputs (CK, CK) operation Differential Data Strobe (DQS, DQS) Average Refresh Cycle (Tcase of 0 oC~ 95 ...




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