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H6968S Datasheet

Part Number H6968S
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description Dual N-Channel MOSFET
Datasheet H6968S DatasheetH6968S Datasheet (PDF)

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H6968S / H6968CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected) • 8-Lead Plastic SO-8 Package Code: S Features • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li ion Battery Packs U.

  H6968S   H6968S






Part Number H6968CTS
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description Dual N-Channel MOSFET
Datasheet H6968S DatasheetH6968CTS Datasheet (PDF)

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200610 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 1/4 H6968CTS Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected) 8 7 6 5 8-Lead Plastic TSSOP-8 Package Code: TS H6968CTS Symbol & Pin Assignment Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain Features • RDS(on)<32mΩ@VGS=2.5V, ID=5.5A • RDS(on)<24mΩ@VGS=4.5V, ID=6.5A • Advance.

  H6968S   H6968S







Part Number H6968CS
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description Dual N-Channel MOSFET
Datasheet H6968S DatasheetH6968CS Datasheet (PDF)

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H6968S / H6968CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected) • 8-Lead Plastic SO-8 Package Code: S Features • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li ion Battery Packs U.

  H6968S   H6968S







Dual N-Channel MOSFET

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H6968S / H6968CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected) • 8-Lead Plastic SO-8 Package Code: S Features • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li ion Battery Packs Use • Designed for Battery Switch Appliactions • ESD Protected Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings 20 ±12 6.5 30 2 1.3 -55 to +150 62.5 Units V V A A W W °C °C/W Total Power Dissipation @TA=25oC Total Power Dissipation @TA=75 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)*2 o *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board Pin Assignment & Internal Schematic Diagram Part No. Pin Assignment Internal Schematic Diagram D1 D2 G2 H6968S S2 G2 S1 G1 1 2 3 4 Top View 8 7 6 5 D2 D2 D1 D1 G1 S1 D S2 D G2 H6968CS S2 G2 S1 G1 1 2 3 4 Top View 8 7 6 5 D D D D G1 S1 S2 H6968S, H6968CS HSMC Product Specification www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted).


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