HA3669

HI-SINCERITY MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 Description The HA3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-92 Maximum Temperatures Tstg Storage Temperature.................................................................................................................... -55 ~ +150 °C Tj Junction Temperature ................................................................................................................................ +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 750 mW Maximum Voltages and Currents BVCBO Collector to Base Breakdown Voltage...................................................................................