HABT2222

REPLACEMENT TYPE : MMBT2222 FEATURES  Genernal Purpose Amplifier HABT2222(NPN) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6V Collector Current-Continuous IC 600 mA Collector Power Dissipation PC Thermal Resistance Junction to Ambient RθJA 250 mW 500 °C /W Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=10μA,IE=0 Collector-Emitter Breakdown Voltage VCEO IC=10mA,IB=0 Emitter-Base Breakdown Voltage VEBO IE=10uA,IC=0 Collector Cut-off Current ICBO VCB=60V,IE=0 Collector cut-off current ICEX VCE=30V,VBE(off)=3V Emitter Cut-off Current IEBO VEB=3V,IC=0 hFE(1) VCE=10V,IC=150mA DC Current Gain hFE(2) VCE=10V,IC=0.1mA hFE(3) VCE=10V,I...