HABT2907

REPLACEMENT TYPE : MMBT2907 FEATURES  Epitaxial Planar Die Construction  Complementary NPN Type Available(HABT2222) HABT2907(PNP) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -600 mA Total Device Dissipation PC Thermal Resistance Junction to Ambient RθJA 250 mW 500 °C /W Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C SOT-23 MARKING:M2B 1: BASE 2:EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=-10μA,IE=0 Collector-Emitter Breakdown Voltage VCEO IC=-10mA,IB=0 Emitter-Base Breakdown Voltage VEBO IE=-10uA,IC=0 Collector Cut-off Current ICBO VCB=-50V,IE=0 Emitter Cut-off Current IEBO VEB=-3V,IC=0 Collector Cut-off Curren...