REPLACEMENT TYPE :MMBT4401
FEATURES
Switching Transistor
HABT4401(NPN)
SWITCHING TRANSISTOR
MAXIMUM RATINGS (TA = 25...
REPLACEMENT TYPE :MMBT4401
FEATURES
Switching Transistor
HABT4401(NPN)
SWITCHING TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base
Voltage
VCBO
60
Collector-Emitter
Voltage
VCEO
40
Emitter-Base
Voltage
VEBO
6
Collector Current-Continuous IC 600
Collector Power Dissipation
PC 300
Thermal Resistance Junction to Ambient RθJA
417
Junction Temperature
TJ 150
Storage Temperature
Tstg -55 to +150
Unit
V V V mA mW °C/W °C °C
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown
Voltage
VCBO
IC=100μA ,IE=0
Collector-Emitter Breakdown
Voltage
VCEO
IC=1mA ,IB=0
Emitter-Base Breakdown
Voltage
VEBO
IE=100μA,IC=0
Collector Cut-off current
ICEX
VCE=35V,VEB(off)=0.4V
Collector Cut-off Current
ICBO
VCB=50V,IE=0
Emitter Cut-off Current
IEBO
VEB=5V,IC=0
hFE(1)
VCE=1V,IC=0.1mA
hFE(2)
VCE=1V,IC=1mA
DC Current Gain
hFE(3)
VCE=1V,IC=...