HABT4403

REPLACEMENT TYPE :MMBT4403 FEATURES  Switching Transistor HABT4403(PNP) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current-Continuous IC -600 Collector Power Dissipation PC 300 Thermal Resistance Junction to Ambient RθJA 417 Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Unit V V V mA mW °C/W °C °C SOT-23 MARKING:2T 1: BASE 2:EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC=-100μA ,IE=0 -40 V Collector-Emitter Breakdown Voltage VCEO IC=-1mA ,IB=0 -40 V Emitter-Base Breakdown Voltage VEBO IE=-100μA,IC=0 -5 V Collector Cut-off current ICEX VCE=-35V,VEB(off)=0.4V -0.1 μA Collector Cut-off Current ICBO VCB=-35V,IE=0 -0.1 μA Emitter Cu...