HABTA06

REPLACEMENT TYPE : MMBTA06 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor HABTA56 HABTA06(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 80 Collector-Emitter Voltage VCEO 80 Emitter-Base Voltage VEBO 4 Collector Current-Continuous IC 500 Collector Power Dissipation PC 300 Thermal Resistance Junction to Ambient RθJA Junction Temperature TJ 416 150 Storage Temperature Tstg -55~+150 Unit V V V mA mW °C/W °C °C SOT-23 1: BASE 2:EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage VCBO VCEO IC=0.1mA,IE=0 IC=1mA,IB=0 80 80 V V Emitter-Base Breakdown Voltage VEBO IE=0.1mA,IC=0 4 V Collector Cut-off Current Collector Cut-off Current ICBO ICEO VCB=80V,IE=0 VCE=60V, IB=0 0....