HAD825SP

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :Preliminary Data Issued Date : 2000.10.01 Revised Date : 2001.05.01 Page No. : 1/2 HAD825SP NPN EPITAXIAL PLANAR TRANSISTOR Features Darlington Transistor Absolute Maximum Ratings Maximum Temperatures Storage Temperature .......................................................................................... -55 ~ +150 °C Junction Temperature................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 80 V VCES Collector to Emitter Voltage ..................................................................................... 55 V VEBO Emitter to Base Voltage ..........................