HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Featu...
HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate
voltage in case of high junction temperature like applying over power consumption, over current etc. Logic level operation (–4 to –6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0
voltage recovery)
Outline
LDPAK
D 4 4
G
Gate resistor
Tempe– rature Sencing Circuit
1 1
2
3
Latch Circuit
Gate Shut– down Circuit
2
3
S
1. Gate 2. Drain 3. Source 4. Drain
HAF1002(L), HAF1002(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Gate to source
voltage Drain current Drain peak current Symbol VDSS VGSS+ VGSS– ID I D(pulse)
Note1
Ratings –60 –16 3 –15 –30 –15
Unit V V V A A A W °C °C
Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg
Note2
50 150 –55 to +150
Typical Operation Characteristics
Item Input
voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Gate operation
voltage I I...