MOSFET. HAF1008 Datasheet

HAF1008 Datasheet PDF


HAF1008
HAF1008(L), HAF1008(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0027-0100Z
Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (-4 to -6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Tempe-
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
1
2
3
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
Rev.1.00, May.13.2003, page 1 of 11


Part HAF1008
Description P-Channel MOSFET
Feature HAF1008; HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 Ma.
Manufacture Renesas
Datasheet
Download HAF1008 Datasheet


HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Powe HAF1008 Datasheet
HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Powe HAF1008L Datasheet
HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Powe HAF1008S Datasheet





HAF1008
HAF1008(L), HAF1008(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Gate to source voltage
VGSS
VGSS
Drain current
ID
Drain peak current
ID (pulse) Note1
Body-drain diode reverse drain IDR
current
Channel dissipation
PchNote2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
Ratings
–60
–16
2.5
–20
–40
–20
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Vop
Min
–3.5
–3.5
Typ
–0.8
–0.35
175
Max
–1.2
–100
–50
–1
–12
Unit
V
V
µA
µA
µA
mA
mA
°C
V
Test Conditions
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Vi = –1.2 V, VDS = 0
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Channel temperature
Rev.1.00, May.13.2003, page 2 of 11



HAF1008
HAF1008(L), HAF1008(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Drain current
Drain current
Drain to source breakdown
voltage
ID1 –7
ID2
V(BR)DSS –60
— A VGS = –3.5 V, VDS = –2 V
–10 mA VGS = –1.2 V, VDS = –2 V
— V ID = –10 mA, VGS = 0
Gate to source breakdown V(BR)GSS –16
V
IG = –800 µA, VDS = 0
voltage
Gate to source breakdown V(BR)GSS 2.5
V
IG = 100 µA, VDS = 0
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain
current
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
–0.8
–0.35
–100
–50
–1
100
–10
µA
µA
µA
µA
mA
mA
µA
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VGS = –1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VDS = –60 V, VGS = 0
Gate to source cutoff voltage VGS(off)
Forward transfer admittance |yfs|
Static drain to source on state RDS(on)
resistance
RDS(on)
Output capacitance
Coss
Turn-on delay time
td(on)
Rise time
tr
–1.1
10
18.5
60
42
865
5.7
26
–2.15
80
54
V
S
m
m
pF
µs
µs
VDS = –10 V, ID = –1 mA
ID = –10 A, VDS = –10 V Note3
ID = –10 A, VGS = –4 V Note3
ID = –10 A, VGS = –10 V Note3
VDS = –10 V, VGS = 0, f = 1 MHz
VGS = -10 V, ID= –10 A, RL = 3
Turn-off delay time
td(off) —
6.5
µs
Fall time
tf — 9 — µs
Body–drain diode forward VDF
-0.9 —
V
IF = –20 A, VGS = 0
voltage
Body–drain diode reverse trr — 100 — ns IF = –20 A, VGS = 0
recovery time
diF/dt = 50A/µs
Over load shut down
operation time Note4
tos1
tos2
1.84 —
1—
ms VGS = –5 V, VDD = –16 V
ms VGS = –5 V, VDD = –24 V
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load
condition.
Rev.1.00, May.13.2003, page 3 of 11




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