HAF1008

HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sencing Circuit Latch Circuit Gate Shutdown Circuit S 1 2 3 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, May.13.2003, page 1 of 11 HAF1008(L), HAF1008(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage Gate to source voltage VGSS VGSS Drain current ID Drain peak current ID (pulse) Note1 Body-drain diode reverse drain IDR current Channel dissipation PchNote2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings –60 –16 2.5 –20 –40 –20 50 150 –55 to +150 Unit V V V A A A W °C °C Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperat...