HAF2015RJ

HAF2015RJ Silicon N Channel MOS FET Series Power Switching REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Temperature hysteresis type. High density mounting. Outline RENESAS Package code: PRSP0008DD-A (Package name: SOP-8 ) 8765 1234 RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 8765 1234 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain DD 78 2 G Gate resistor Tmperature sensing circuit Self return circuit Gate shutdown circuit 1 MOS1 S DD 56 4 G Gate resistor Tmperature sensing circuit Self return circuit Gate shutdown circuit 3 MOS2 S REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 1 of 9 HAF2015RJ Absolute Maximum Ratings Item Symbol Value Drain to source voltage VDSS 60 Gate to source voltage VGSS 16 VGSS –2.5 Drain current Drain peak current ID 2 ID (pulse) Note 1 4 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation IDR IAP Note 4 EAR Note 4 Pch Note 2 Pch Note 3 2 ...