HAF2027

HAF2027(L), HAF2027(S) Silicon N Channel Power MOS FET Power Switching REJ03G1674-0100 Rev.1.00 May 19, 2008 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features Logic level operation (4 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 2 1. Gate 2. Drain (Flange) 3. Source 3 HAF2027(L) www.DataSheet4U.com HAF2027(S) D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit S REJ03G1674-0100 Page 1 of 8 Rev.1.00 May 19, 2008 HAF2027(L), HAF2027(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Cannel dissipation Cannel temperature Storage temperature Notes: 1. PW ≤ 10ms, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS VGSS ID ID (pulse) Note1 IDR PchNote2 Tch Tstg Ratings 60 16 –2.5 50 100 50 100 150 –55 to +150 Unit V V V A A A W ...