HAF70009

HAF70009 Data Sheet August 1999 File Number 4770 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75639. Features 56A, 100V Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.intersil.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HAF70009 PACKAGE TO-220AB TEMP. RANGE (oC) -55 to 175 G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HAF70009 100 100 ±20 56 Figure 4 Figures 6, 14, 15 200 1.35 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...