HAT1029R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-522 (Z) 1st. Edition May 1997 Features
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HAT1029R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-522 (Z) 1st. Edition May 1997 Features
Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT1029R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –20 ±10 –3.5 –28 –3.5
Unit V V A A A W W °C °C
Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg
Note2 Note3
2 3 150 –55 to +150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
2
HAT1029R
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown
voltage Gate to source breakdown
voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff
voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward
voltage Body–drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on)...