HAT1035R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of –4 V gate...
HAT1035R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
Low on-resistance Capable of –4 V gate drive Low drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8
)
78
56
DD
DD
8 7 65
2
4
1 234
G
G
S1
MOS1
S3
MOS2
REJ03G0845-0100 Rev.1.00
Apr.22,2005
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
VDSS
–150
Gate to Source voltage
VGSS
±15
Drain current Drain peak current
ID ID(pulse)Note1
–0.25 –1
Body-Drain diode reverse Drain current Channel dissipation Channel dissipation
IDR Pch Note2 Pch Note3
–0.25 1 1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
(Ta = 25°C)
Unit V V A A A W W °C °C
Rev.1.00 Apr. 22, 2005 page 1 of 3
HAT1035R
Electrical Characteristics
Item
Symbol
Drain to Source breakdown voltage
V(BR)DSS
Gate to Source breakdown voltage V(BR)GSS
Gate to Source leak current
IGSS
Zero Gate voltage Drain current
IDSS
Gate to Source cutoff voltage
VGS(off)
Static Drain to Source on state resistance
RDS(on) RDS(on)
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay t...