HAT1036R

HAT1036R Silicon P Channel Power MOS FET Power Switching ADE-208-662D (Z) 5th. Edition February 1999 Features Low on-resistance R DS(on) = 11 mΩ typ Capable of -4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1036R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings -30 ±20 -12 -96 -12 2.5 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25°C) Item Symbol Min -30 — — -1.0 — — 12 — — — — — — — — — — — — Typ — — — — 11 21 20 4200 870 360 70 12 14 120 350 100 120 -0.85 55 Max — ±0.1 -1 -2.5 14 34 — — — — — — — — — — — -1.11 — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = -12 A, VGS = 0 Note1 I F = -12 A, VGS = 0 diF/ dt = 20 A/ µs Test Conditions I D = -10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, I D = -1 mA I D = -6 A, VGS = -10 V Note1 I D = -6 A, VGS = -4 V Note1 I D = -6 A, VDS = -10 V Note1 VDS = -10 V VGS = 0 f = 1 MHz VDD = -10 V VGS = -10 V I D = -12 A VGS = -4 V, ID = -6 A VDD ≅ -10 V Drain to source breakdown voltage V(BR)DSS Gate to s...