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HAT2206C
Silicon N Channel MOS FET Power Switching
REJ03G1238-0500 Rev.5.00 Jan 26, 2006
Features
...
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HAT2206C
Silicon N Channel MOS FET Power Switching
REJ03G1238-0500 Rev.5.00 Jan 26, 2006
Features
Low on-resistance RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) Low drive current. High density mounting 1.8 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
1
2
3
S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Drain to source
voltage VDSS Gate to source
voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) Ratings 12 ±8 2 8 2 830 150 –55 to +150 Unit V V A A A mW °C °C
Rev.5.00 Jan 26, 2006 page 1 of 6
HAT2206C
Electrical Characteristics
Item Drain to Source breakdown
voltage Gate to Source breakdown
voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff
voltage Drain to Source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) Min 12 ±8 — — 0.3 — — — 3.5 — — — — — — — — — — — Typ — — — — — 65 81 113 5.5 260 46 22 3.5 0.7 0.7 4 7 43 3 0.8 Max — — ±10 1 1.2 85 114 170 — — — — — — — — — — — 1.1 Unit V V µA µA V mΩ mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V
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(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 IG = ±10...