Data Sheet
HAT2210R
Silicon N Channel Power MOSFET with Schottky Barrier Diode High Speed Power Switching
R07DS1368EJ03...
Data Sheet
HAT2210R
Silicon N Channel Power
MOSFET with Schottky Barrier Diode High Speed Power Switching
R07DS1368EJ0301 Rev.3.01
Jan 20, 2017
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8
)
8765
78 DD
56 DD
1234
2
4
G
G
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
S 1
MOS1
S 3
MOS2 and Schottky Barrier Diode
Absolute Maximum Ratings
Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation
Symbol VDSS VGSS ID
ID(pulse)Note1 IDR
Pch Note2
MOS1 30 ±20 7.5 60 7.5 1.5
MOS2 & SBD 30 ±12 8.0 64 8.0 1.5
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW 10 s, duty cycle 1% 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit V V A A A W
°C °C
R07DS1368EJ0301 Rev.3.01 Jan 20, 2017
Page 1 of 10
HAT2210R
Electrical Characteristics
MOS1
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forw...