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HAT2218R
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
REJ...
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HAT2218R
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
REJ03G0396-0300 Rev.3.00 Aug.23.2004
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
Outline
SOP-8
7 8 D1 D1 5 6 S1/D2 S1/D2 8 2 G1 4 G2 5 7 6
3 1 2
4
S1/D2(kelvin) 1
S2 3
MOS1
MOS2 and Schottky Barrier Diode
Absolute Maximum Ratings
(Ta = 25°C)
Ratings Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR MOS1 30 ±20 7.5 60 7.5 MOS2 & SBD 30 ±12 8.0 64 8.0 Unit V V A A A W
Channel dissipation Pch Note2 1.5 1.5 Channel temperature Tch 150 150 Storage temperature Tstg –55 to +150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
°C °C
Rev.3.00, Aug.23.2004, page 1 of 9
HAT2218R
Electrical Characteristics
MOS1
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(Ta = 25°C)
Item Drain to source breakdown
voltage Gate to source leak current Zero gate
voltage drain current Gate to source cutoff
voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward
voltage Body–drain diode reverse recovery time Notes: 3...