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HAT2282C

Renesas Technology

Silicon N-Channel Power MOSFET

Description
HAT2282C Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V) Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1329-0100 Rev.1.00 Jan 26, 2006 23 45 DD DD 6 G S 1 1. Source 2. Dr...


Renesas Technology

HAT2282C

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