CYStech Electronics Corp.
Dual PNP Digital Transistors
HBA114TS6R
Spec. No. : C254S6R Issued Date : 2003.05.23 Revised ...
CYStech Electronics Corp.
Dual PNP Digital Transistors
HBA114TS6R
Spec. No. : C254S6R Issued Date : 2003.05.23 Revised Date : 2011.02.21 Page No. : 1/6
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy. Two DTA114T chips in a SOT-363 package. Mounting by SOT-323 automatic mounting machines is possible. Mounting cost and area can be cut in half. Transistor elements are independent, eliminating interference. Complements the HBC114TS6R. Pb-free package.
Equivalent Circuit
HBA114TS6R
Outline
SOT-363R
RB2
TR1
TR2
RB1
RB1=10kΩ , RB2=10 kΩ
HBA114TS6R
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor,Ta=25℃)
Spec. No. : C254S6R Issued Date : 2003.05.23 Revised Date : 2011.02.21 Page No. : 2/6
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC Pd Tj Tstg
Limits
Unit
-50
V
-50
V
-5
V
-100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note: 150mW per element must not be exceeded.
Characteristics (Each Transi...