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HBA114TS6R

Cystech Electonics

Dual PNP Digital Transistors

CYStech Electronics Corp. Dual PNP Digital Transistors HBA114TS6R Spec. No. : C254S6R Issued Date : 2003.05.23 Revised ...


Cystech Electonics

HBA114TS6R

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CYStech Electronics Corp. Dual PNP Digital Transistors HBA114TS6R Spec. No. : C254S6R Issued Date : 2003.05.23 Revised Date : 2011.02.21 Page No. : 1/6 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. Only the on/off conditions need to be set for operation, making device design easy. Two DTA114T chips in a SOT-363 package. Mounting by SOT-323 automatic mounting machines is possible. Mounting cost and area can be cut in half. Transistor elements are independent, eliminating interference. Complements the HBC114TS6R. Pb-free package. Equivalent Circuit HBA114TS6R Outline SOT-363R RB2 TR1 TR2 RB1 RB1=10kΩ , RB2=10 kΩ HBA114TS6R CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Each Transistor,Ta=25℃) Spec. No. : C254S6R Issued Date : 2003.05.23 Revised Date : 2011.02.21 Page No. : 2/6 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits Unit -50 V -50 V -5 V -100 mA 200 (Note) mW 150 °C -55~+150 °C Note: 150mW per element must not be exceeded. Characteristics (Each Transi...




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