CYStech Electronics Corp.
Dual PNP Digital Transistors
HBA143ES6R
Spec. No. : C268S6R Issued Date : 2003.05.28 Revised ...
CYStech Electronics Corp.
Dual PNP Digital Transistors
HBA143ES6R
Spec. No. : C268S6R Issued Date : 2003.05.28 Revised Date : 2011.02.21 Page No. : 1/6
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy. Two DTA143E chips in a SOT-363 package. Mounting by SOT-323 automatic mounting machines is possible. Mounting cost and area can be cut in half. Transistor elements are independent, eliminating interference. Complements the HBC143ES6R. Pb-free package.
Equivalent Circuit
HBA143ES6R
RBE2 RB2
TR1
TR2
RB1
RBE1
RB1=4.7kΩ , RB2=4.7 kΩ RBE1=4.7kΩ , RBE2=4.7 kΩ
Outline
SOT-363R
HBA143ES6R
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃)
Spec. No. : C268S6R Issued Date : 2003.05.28 Revised Date : 2011.02.21 Page No. : 2/6
Parameter
Supply
Voltage Input
Voltage
Output Current
Power Dissipation Junction Temperature Storage Temperature
Symbol
VCC VIN IO IO(max.) Pd Tj
Tstg
Limits
Unit
-50
V
-30~+10
V
-100
mA
-100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note : 150mW per element must not be exceeded.
Characteristics (Each T...