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HBA143ES6R

Cystech Electonics

Dual PNP Digital Transistor

CYStech Electronics Corp. Dual PNP Digital Transistors HBA143ES6R Spec. No. : C268S6R Issued Date : 2003.05.28 Revised ...


Cystech Electonics

HBA143ES6R

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CYStech Electronics Corp. Dual PNP Digital Transistors HBA143ES6R Spec. No. : C268S6R Issued Date : 2003.05.28 Revised Date : 2011.02.21 Page No. : 1/6 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. Only the on/off conditions need to be set for operation, making device design easy. Two DTA143E chips in a SOT-363 package. Mounting by SOT-323 automatic mounting machines is possible. Mounting cost and area can be cut in half. Transistor elements are independent, eliminating interference. Complements the HBC143ES6R. Pb-free package. Equivalent Circuit HBA143ES6R RBE2 RB2 TR1 TR2 RB1 RBE1 RB1=4.7kΩ , RB2=4.7 kΩ RBE1=4.7kΩ , RBE2=4.7 kΩ Outline SOT-363R HBA143ES6R CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Each Transistor, Ta=25℃) Spec. No. : C268S6R Issued Date : 2003.05.28 Revised Date : 2011.02.21 Page No. : 2/6 Parameter Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Symbol VCC VIN IO IO(max.) Pd Tj Tstg Limits Unit -50 V -30~+10 V -100 mA -100 mA 200 (Note) mW 150 °C -55~+150 °C Note : 150mW per element must not be exceeded. Characteristics (Each T...




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