HBA8573S6R

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistors Spec. No. : C306S6R Issued Date : 2010.03.22 Revised Date : 2011.02.22 Page No. : 1/6 (dual transistors) HBA8573S6R Features Two BTA1037 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Excellent hFE linearity. Pb-free package. Equivalent Circuit HBA8573S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -60 -50 -6 -150 200(total) 150 -55~+150 Unit V V V mA mW °C °C *1 Note : *1 150mW per element must not be exceeded HBA8573S6R CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -60 -50 -6 120 80 Typ. -0.2 180 2 Max. -0.1 -0.1 -0.5 820 3.5 Unit V V V μA μA V MHz pF Spec. No. : C306S6R Issued Date : 2010.03.22 Revised Date : 2011.02.22 Page No. : 2/6 Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information ...