HBC546

HI-SINCERITY MICROELECTRONICS CORP. HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/4 Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. Features High Breakdown Voltage: 65V High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ..........................