HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.04.18 Page No. : 1/...
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.04.18 Page No. : 1/4
HBC807
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.
Feature
Collector current capability IC=-800mA Collector-emitter
voltage VCEO(max)=-45V General purpose switching and amplification NPN complement: HBC817 series Pb-Free Package is available
SOT-23
Absolute Maximum Ratings
Characteristic Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current-Continuous Total Device Dissipation (TA=25oC) Total Device Dissipation (Dreate above 25oC) Thermal Resistance, Junction to Ambient
Symbol VCEO VCBO VEBO IC
PD
RθJA
Value (Max.) -45 -50 -5 -800 225 1.8 556
Unit V V V mA
mW mW/oC oC/W
Electrical Characteristics (TA=25°C, unless otherwise noted.)
Characteristic Collector-Emitter Breakdown
Voltage ...